TY - JOUR AU - Kowalczewski, Piotr AU - Nakwaski, Włodzimierz AU - Sarzała, Robert P. PY - 2010/12/30 Y2 - 2024/03/29 TI - Photonic crystal used to increase extraction efficiencyof ZnO light-emitting diodes JF - Photonics Letters of Poland JA - Photonics Lett. Pol. VL - 2 IS - 4 SE - Articles DO - 10.4302/photon. lett. pl.v2i4.162 UR - https://photonics.pl/PLP/index.php/letters/article/view/2-64 SP - pp. 186-188 AB - Low extraction efficiency following a low angle of total internal reflection at the output surface of simple light-emitting diodes (LEDs) considerably limits their performance and reduces their possible applications. From among various methods used to enhance extraction of radiation from LEDs manufactured from high index-of- refraction materials, an application of photonic crystals seems to be quite effective and relatively simple technologically. In the present paper, the FDTD approach is used to study the performance of a ZnO LED. As compared with a simple planar ZnO LED structure, the application of an optimized photonic crystal enables in this case an enormous increase in extraction efficiency by more than thirteen times. <br /><br />Full text: <a class="file" href="/PLP/index.php/letters/article/view/2-64/136" target="_parent">PDF</a> <br /><br /><strong>References:</strong> <ol><li>W. Z. Xu et al., "ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition", Appl. Phys. Lett. 88, 173506 (2006). <a href="http://dx.doi.org/10.1063/1.2199588">[CrossRef]</a> </li><li>J. C. Sun et al., "Realization of ultraviolet electroluminescence from ZnO homojunction with n-ZnO/p-ZnO:As/GaAs structure", Appl. Phys. Lett. 90, 121128 (2007). <a href="http://dx.doi.org/10.1063/1.2716206">[CrossRef]</a> </li><li>S. Chu et al., "Sb-doped p-ZnO/Ga-doped n-ZnO homojunction ultraviolet light emitting diodes", Appl. Phys. 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