Fabrication and characterization of c-Si/porous-Si/CdS/ZnxCd1-xO heterojunctions for applications in nanostructured solar cells

Huseyn Mamedov, Mustafa Muradov, Zoltan Konya, Akos Kukovecz, Krisztian Kordas, Syed Ismat Shah, Vusala Mamedova, Khumar Ahmedova, Elgun Tagiyev, Vusal Mamedov

Abstract


Solar cells based on c-Si/porous-Si/CdS/ZnxCd1-xO heterojunctions were synthesized by depositing CdS films on c-Si/porous-Si (PS) substrates by electrochemical deposition (ED). PS layers with systematically varied pore diameter (8-45 nm) and were fabricated on p-type c-Si wafers using electrochemical etching. The window layers of ZnxCd1-xO with several Zn concentrations(x=0.2; 0.4; 0.5 and 0.6) were also deposited on the CdS buffer layers by ED. The photoelectrical properties of heterojunctions were studied as functions of PS pore size and Zn content in ZnxCd1-xO. The optimal pore size and Zn contents were found to be 10 nm and x=0.6, respectively. These yielded a solar cell sample exhibiting an efficiency of 9.9%, the maximum observed in this study.

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Photonics Letters of Poland - A Publication of the Photonics Society of Poland
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ISSN: 2080-2242