Enhancement of Minority Carrier Lifetime of Fe Contaminated Boron-Phosphorus Compensated p-Type SoG Silicon

Mohammad Ziaur Rahman, Mohammad Jahangir Alam

Abstract


To understand the role of deliberate phosphorus doping on the minority carrier lifetime of iron contaminated boron-phosphorus-compensated p-type solar grade silicon, a numerical study has been performed. This study confirmed that compensation results in a significant increase in bulk lifetime of minority carrier. The gain in carrier lifetime is predicted due to the shift in Fermi energy level, carriers screening and reduction in net equilibrium hole concentration. The bulk lifetime of minority carrier reaches its maximum for phosphorus concentration around 1015cm-3 if the boron concentrations remain fixed at 1017cm-3.

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Photonics Letters of Poland - A Publication of the Photonics Society of Poland
Published in cooperation with SPIE

ISSN: 2080-2242