The Ettingshausen coefficient in quantum wells under influence of laser radiation in the case of electron-optical phonon interaction

Thu Hang Dao, Thu Ha Dao, Thi Thu Thanh Duong, Quang Bau Nguyen

Abstract


By using quantum kinetic equation for electrons interacting with optical phonon, the analytic expression for Ettingshausen coefficient (EC) in the quantum wells with parabolic potential (QWPP) under influence of laser radiation is obtained. The dependence of EC on the frequency, the amplitude of laser radiation, the quantum wells parameters and the temperature gradient are studied. The theoretical results are numerically calculated, plotted, and discussed for GaAs/GaAsAl quantum well. Especially, when we study the dependence of EC on temperature, we realize that the EC in QWPP is 102 times bigger than that in the bulk semiconductors.

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Photonics Letters of Poland - A Publication of the Photonics Society of Poland
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