Electrical effect of CdSe layer thickness deposited on p- Si wafer

Electrical effect of CdSe layer thickness deposited on p- Si wafer

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DOI:

https://doi.org/10.4302/plp.v15i4.1240

Abstract

In this paper, the current-voltage characteristics of n-CdSe/p-Si heterostructures are analyzed using experimental data and electrical junction characteristics. To develop n-CdSe/p-Si heterojunctions, a wide band gap semiconducting layer of n-type CdSe thin film has been grown on a p-type Si (100) substrate at 100oC with different thickness by using the spray pyrolysis technique. The I-V characteristic of n-CdSe\ p-Si heterostructure has been measured in a room in the dark and under illumination (lamp/160 W). Also, the solar cell IV characteristics and efficiency were measured. The characteristic parameters of the structure such as barrier height, ideality factor, and series resistance were determined from the current-voltage measurement.

 

Author Biography

Laith Altaan, professor doctor laith altaan\ university of mosul- department of physic college of science

prof. Dr. Laith ALTAAN

university of Mosul college of Science department of phyisc

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Published

2023-12-31

How to Cite

[1]
J. Al Abbas and L. Altaan, “Electrical effect of CdSe layer thickness deposited on p- Si wafer : Electrical effect of CdSe layer thickness deposited on p- Si wafer ”, Photonics Lett. Pol., vol. 15, no. 4, pp. 57–59, Dec. 2023.

Issue

Vol. 15 No. 4 (2023)

Section

Articles

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