SRH Recombination Strength of Interstitial Iron in Solar Grade Silicon

Authors

  • Mohammad Ziaur Rahman Ahsanullah University of Science and Technology
  • Mohammad Jahangir Alam

DOI:

https://doi.org/10.4302/photon.%20lett.%20pl.v5i3.414

Abstract

Shockley-Read-Hall (SRH) recombination is the main determinant for the effective minority carrier lifetime in silicon. This research has focused on the study to find the recombination strength of interstitial iron on low injection Shockley-Read-Hall recombination in compensated solar grade silicon by means of analytical modelling. This study found that strength of iron in SRH recombination is depends on the doping concentration and symmetry of minority carrier capture cross-section. This study shows that iron become more recombination active at higher doping and at lower symmetry of capture cross-section.

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References
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Author Biography

Mohammad Jahangir Alam

Professor, Dept. of EEE, BUET.

 

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Published

2013-09-26

How to Cite

[1]
M. Z. Rahman and M. J. Alam, “SRH Recombination Strength of Interstitial Iron in Solar Grade Silicon”, Photonics Lett. Pol., vol. 5, no. 3, pp. pp. 118–120, Sep. 2013.

Issue

Vol. 5 No. 3 (2013)

Section

Articles

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